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| AP3303H/J Advanced Power Electronics Corp. Low Gate Charge Simple Drive Requirement Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 25m 28A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3303J) is available for low-profile applications. G DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 25 20 28 18 130 31 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 110 Unit /W /W Data & specifications subject to change without notice 200811031 AP3303H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o Test Conditions VGS=0V, ID=250uA Min. 25 2 - Typ. 0.02 20 14.5 3 8.5 8.8 65 11 7 340 250 98 Max. Units 25 4 1 100 100 24 540 V V/ m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=10V, ID=20A VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= 20V ID=20A VDS= 20V VGS=10V VDS=15V ID=20A RG=3.3,VGS=10V RD=0.75 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=20A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/s Min. - Typ. 30.5 29 Max. Units 1.5 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP3303H/J 90 80 80 T c =25 o C 10V 70 T c =150 o C 10V 9.0V 50 70 9.0V ID , Drain Current (A) 60 ID , Drain Current (A) 60 8.0V 50 40 40 8.0V 7.0V 7.0V 30 30 20 20 V G =5.0V 10 10 V G =5.0V 0 0 2 4 6 8 0 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 50 1.8 ID=8A T C =25 C 40 o 1.6 I D =8A V G =10V Normalized RDS(ON) 1.4 RDS(ON) (m ) 30 1.2 1.0 20 0.8 10 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 5 100 4.5 10 4 1 VGS(th) (V) 1.2 IS (A) 3.5 T j =150 o C 0.1 T j =25 o C 3 2.5 0.01 0 0.4 0.8 2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP3303H/J 16 10000 f=1.0MHz I D =20A 14 VGS , Gate to Source Voltage (V) 12 10 V DS =12V V DS =16V V DS =20V C (pF) 1000 8 Ciss Coss 100 6 Crss 4 2 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100 Normalized Thermal Response (Rthjc) DUTY=0.5 0.2 ID (A) 0.1 0.1 0.05 10 10ms T c =25 o C Single Pulse 100ms 1s DC PDM 0.02 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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